| 000 | 00625nam a2200193Ia 4500 | ||
|---|---|---|---|
| 008 | 230515s9999||||xx |||||||||||||| ||und|| | ||
| 040 | _aMAIN | ||
| 041 | _aEnglish | ||
| 082 |
_a621.38152 _bPUS P19 |
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| 100 | _aPushpakaran, Bejoy N. | ||
| 245 | 0 |
_aModelling and electrothermal simulation of Sic power devices: using SilVaco ATLAS _cBejoy N. Pushpakaran, Stephen B. Bayne |
|
| 260 |
_aNew Jersey _bWorld Scientific _c2019 |
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| 300 | _axi, 447 | ||
| 500 | _aIncludes bibliographical references and index | ||
| 650 | _aSilicon Carbide | ||
| 650 | _aWide gap Semiconductor | ||
| 700 | _aBayne, Stephen B. | ||
| 942 | _cBK | ||
| 999 |
_c15528 _d15528 |
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